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This method is highly useful in designing more capable heterojunction photocatalysts for various applications in photocatalysis. 2. Experimental and Analysis Method 2.1. Photocatalyst preparation. Boron-doped g-C 3 N 4 powder was prepared by a modified method based on a common polycondensation route [37,39,44]. Ten grams of melamine powder was ...
The co-precipitation method can obtain a high S BET through a homogeneous solid solution (i.e., 103 m 2 g −1 for NiCeZr(C) and 72 m 2 g −1 for BNiCeZr(C)). An obvious and unavoidable decrease in surface area with the doping of boron during impregnation was noticed.
Here we demonstrate a very simple, yet viable method for selective boron doping in natural SCD (nSCD) via an easy thermal diffusion process at a much lower temperature than those used in any other doping methods. We use heavily doped silicon nanomembranes (SiNMs), which are now easily accessible, as our dopant carrying medium.
An open diffusion method of doping a silicon body with boron. In a first open diffusion heating step, a boron glass is deposited upon the silicon body with a silicon-rich boron phase (SiB 6) formed beneath the glass where deposition is directly on silicon.The boron glass and SiB 6 layer are formed by exposing the silicon body to a gas mixture containing a predetermined boron quantity and boron ...
The element doping method has been widely used to adjust the fluorescence properties of CDs and is considered to be the most effective method of producing CDs with excellent fluorescence properties . In most of these dopings, boron (B) or nitrogen
In this study, boron-doped graphene (B-G) ... (CVD) method, 4 thermal annealing approach 5 or via Wurtz-type reductive coupling reaction 6 have been successfully demonstrated. So far, the research involving G doping with B atoms using hydrothermal synthesis has not been well established. Furthermore, chemical doping is an active research area ...
The improved method includes the steps of providing a source of boron and halogen or pseudo-halogen as a precursor gas, introducing the gaseous boron species into the glow discharge plasma, and monoatomically incorporating the boron species into the semiconductor host matrix as the matrix is being formed so that at least approximately 1.9% of ...
Another etch stop method is called ‘buried etch stop’. This method, like before, relies on heavy boron doping, but instead of doping the surface of the substrate, boron ions are bombarded with high energy. Since penetration depends on the kinetic energy of the ions, controlling the energy of the ions can control the depth of the doped layer.
Doping means the introduction of impurities into the semiconductor crystal to deliberately change its conductivity due to deficiency or excess of electrons. In contrast to the doping during the wafer fabrication, where the entire wafer is doped, this article describes the partial doping of silicon.
Graphene based materials can be effectively modified by doping in order to specifically tailor their properties toward specific applications. So far the most used and widely investigated dopant heteroatom is probably nitrogen. However, boron is also an
Mar 22, 2012 Kyoto University researchers have developed a new method for the boron-doping of two dimensional carbon materials, which is expected to be a promising approach towards the development of highly ...
In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH 4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask
Boron-doped graphene/boron-doped diamond (BG/BDD) is synthesized by an electron-assisted hot-filament chemical vapor deposition (EA-HFCVD) method. Boron atoms are effectively doped into the graphene and diamond, and BG sheets are grown vertically on the BDD. The boron content of the BG affects the BG/BDD-electrode performance, and the electrode has a high specific capacitance when
Nov 30, 2019 In this study, boron-doped graphene (B-G) ... (CVD) method, 4 thermal annealing approach 5 or via Wurtz-type reductive coupling reaction 6 have been successfully demonstrated. So far, the research involving G doping with B atoms using hydrothermal synthesis has not been well established. Furthermore, chemical doping is an active research area ...
Oct 28, 2020 Herein, we demonstrate a novel one‐pot synthetic method towards a series of boron‐doped polycyclic aromatic hydrocarbons (B‐PAHs, 1 a–1 o), including hitherto unknown B‐doped zethrene derivatives, from ortho‐aryl substituted diarylalkynes with high atom efficiency and broad substrate scopes.A reaction mechanism is proposed based on the experimental investigation together
Doping means the introduction of impurities into a semiconductor crystal to the defined modification of conductivity. Two of the most important materials silicon can be doped with, are boron (3 valence electrons = 3-valent) and phosphorus (5 valence electrons = 5-valent).
Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH 4 /N 2 /O 2 and a flourine-rich source such as, but not limited to, CF 4
Jan 01, 2020 As shown in Fig. 8c, nitrogen and boron co-doped graphene aerogels prepared through solvothermal method showed high CO 2 capture capacity of 2.1–2.9 mmol g −1 in 273 K and 1.0 bar, which indicated that nitrogen and boron co-doped graphene aerogels could be used as a potential adsorbent for CO 2 (Liu et al., 2017).
Doping diffusion is a process used to introduce precisely controlled impurities into a material to change it's electrical, optical or structural properties. In some cases, these impurities can be introduced uniformly throughout the material during the deposition of the material. In other cases these impurities can be introduced at the surface of the material using a solid, liquid or gaseous ...
The boron-doping silicon beam commonly used in microdevices exhibits a nonuniform material property along its thickness or width because of the gradient of boron concentration induced by diffusion process. The constant of rigidity, one of the most important parameters of microbeam, needs to be accurately calculated and designed in the development of high precise sensors and actuators.
Boron-doped TiO2 nanoparticles were prepared by the sol−gel method and characterized by XRD, TEM, XPS, FT-IR, and UV−vis spectroscopy. XRD results showed that the doping of boron ions could efficiently inhibit the grain growth and facilitate the anatase-to-rutile transformation prior to the formation of diboron trioxide phase. FT-IR and XPS results revealed that the doped boron was present ...
The present invention provides an etchant composition and method for the resistivity specific etching of doped silicon films which overlie intrinsic or lightly doped crystal regions. The etchant comprises hydrofluoric acid, nitric acid, and acetic acid, the molecular ratio of nitric acid to hydrofluoric acid being greater than 2,0 and the mole percentage of nitric acid being greater than 14 ...
Pristine and boron-doped anatase TiO2 were prepared via a facile sol–gel method and the hydrothermal method for application as anode materials in sodium-ion batteries (SIBs). The sol–gel method leads to agglomerated TiO2, whereas the hydrothermal method is conducive to the formation of highly crystalline and discrete nanoparticles. The structure, morphology, and electrochemical
Jan 20, 2021 Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical ...
Graphene based materials can be effectively modified by doping in order to specifically tailor their properties toward specific applications. So far the most used and widely investigated dopant heteroatom is probably nitrogen. However, boron is also an equally important element that can induce novel and comp 2016 Journal of Materials Chemistry A HOT Papers 2016 Journal of Materials Chemistry A ...
Boron-doped TiO2 nanoparticles were prepared by the sol−gel method and characterized by XRD, TEM, XPS, FT-IR, and UV−vis spectroscopy. XRD results showed that the doping of boron ions could efficiently inhibit the grain growth and facilitate the anatase-to-rutile transformation prior to the formation of diboron trioxide phase. FT-IR and XPS results revealed that the doped boron was present ...
Boron-doped graphene/boron-doped diamond (BG/BDD) is synthesized by an electron-assisted hot-filament chemical vapor deposition (EA-HFCVD) method. Boron atoms are effectively doped into the graphene and diamond, and BG sheets are grown vertically on the BDD. The boron content of the BG affects the BG/BDD-electrode performance, and the electrode has a high specific capacitance when
Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH 3) or diborane (B 2 H 6) with heated tungsten (W) catalyzer.This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail.
B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods.
Pristine and boron-doped anatase TiO 2 were prepared via a facile sol–gel method and the hydrothermal method for application as anode materials in sodium-ion batteries (SIBs). The sol–gel method leads to agglomerated TiO 2, whereas the hydrothermal method is conducive to the formation of highly crystalline and discrete nanoparticles.The structure, morphology, and electrochemical
Disclosed is a plasma doping method capable of introducing a large quantity of impurities into a substrate at a relatively low temperature (200° to 600° C.). In the LSI fabrication process represented by Si process, it is necessary to introduce impurities at a properly controlled concentration into desired positions. In this plasma doping method, in order to satisfy this application, the ...
We investigate the electronic and vibrational properties of bottom-up synthesized aligned armchair graphene nanoribbons of N = 7 carbon atoms width periodically doped by substitutional boron atoms (B-7AGNRs). Using angle-resolved photoemission spectroscopy and density functional theory calculations, we find that the dopant-derived valence and conduction band states are notably hybridized with ...
Comparison of the effects of synthesis methods of B, N, S, and P-doped carbon dots with high photoluminescence properties on HeLa tumor cells† Aswandi Wibrianto a, Siti Q. Khairunisa b, Satya C. W. Sakti ac, Yatim L. Ni'mah d, Bambang Purwanto e and Mochamad Z. Fahmi * ac a Department of Chemistry, Universitas Airlangga, Surabaya 60115 ...
May 31, 2016 Ma’s team have found a more efficient alternative method of synthesising doped diamonds, which can be carried out at a relatively low temperature of 800 degrees Celsius.If a boron-doped
method towards a series of boron-doped polycyclic aromatic hydrocarbons (B-PAHs, 1a–1o), including hitherto unknown B-doped zethrene derivatives, from ortho-aryl substituted diarylalkynes with high atom efficiency and broad substrate scopes. A reaction mechanism is proposed based on the experimental investigation together with the theoretical ...
Boron‐doped bulk diamond and the boron‐doped hydrogen terminated (001) surface of diamond were investigated using the cyclic cluster model. Structure and stability of the hydrogen‐terminated (001) surface were calculated and compared with experimental and other theoretical results from the literature. Boron‐doping was modeled by substitution of a carbon atom by a boron atom in ...
With boron doping, diamond can be transformed from an insulator into a semiconductor or even a superconductor, wherein a boron atom is in the form of a host impurity in the diamond. High-boron doping in the diamond film may enhance its electrical resistivity (up to 10 −3 Ωcm order). In order to improve the efficiency of B-doping pursuing ...
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